
This particular technology will be used in all forms of flash memory products, and the two companies that have made the announcement concerning the technology were Intel and Toshiba.
The two tech firms have stated that they are working on a 3D NAND memory chip that will be stacked onto each other in order to store more data. Unlike single plane chips, which are currently used in current generation solid state drives, 3D NAND will be able to increase speeds as well as the total lifespan of the storage product.
Toshiba has stated that it has created the world’s first 48-layer NAND, yielding a 16 GB chip with boosted speeds and reliability. The Japanese tech company has now created flash memory on the 15 nm process, which happens to be the smallest lithographic process for manufacturing such memory.
While the firm has given manufacturers engineering samples, products sporting the new form of NAND flash memory will not be arriving for at least 12 months or more. Side by side, leading manufacturer of desktop, laptop and server processors, Intel has partnered up with Micron in order to start mass production of 32-layer NAND chips. Both companies are sampling large memory chips in the 32GB variant, with 48 GB ones arriving very soon.
According to Micron, the chips could be used to make gum-stick sized M.2 PCI-E SSDs that could boast storage up to 3.5 TB in storage, while SSDs featuring the 2.5 inch form factor could house 10 TB or more.
Samsung was the first company to introduce 3D NAND form of flash memory in its 850 model SSD, so Toshiba, Intel, and Micron will be taking the fight to the South Korean phone giant, assuming those companies can price their storage products aggressively in order to gain an advantage.
No comments:
Post a Comment